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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.1 www.infineon.com 2017-02-09 AIKW50N60CT trenchstop tm series lowlossduopack:igbtintrenchstop tm andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode features: ?automotiveaec-q101qualified ?designedfordc/acconvertersforautomotiveapplication ?verylowv ce(sat) 1.5v(typ.) ?maximumjunctiontemperature175c ?dynamicallystresstested ?shortcircuitwithstandtime5s ?100%shortcircuittested ?100%ofthepartsaredynamicallytested ?positivetemperaturecoefficientinv ce(sat) ?lowemi ?lowgatechargeq g ?greenpackage ?verysoft,fastrecoveryantiparallelemittercontrolledhe diode ?trenchstop tm andfieldstoptechnologyfor600v applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed applications: ?maininverter ?climatecompressor ?ptcheater ?motordrives keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package AIKW50N60CT 600v 50a 1.5v 175c ak50dct pg-to247-3 g c e g c e
datasheet 2 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g c e
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datasheet 4 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage cesat v ge =15.0v, i c =50.0a t vj =25c t vj =175c - - 1.50 1.90 2.00 - v diode forward voltage f v ge =0v, i f =50.0a t vj =25c t vj =175c - - 1.65 1.60 2.05 - v gate-emitter threshold voltage ge(th) i c =0.80ma, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current k ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - 1250 40 - a gate-emitter leakage current k ges v ce =0v, v ge =20v - - 100 na transconductance i fs v ce =20v, i c =50.0a - 31.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 3140 - output capacitance e oes - 200 - reverse transfer capacitance e res - 93 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =480v, i c =20.0a, v ge =15v - 310.0 - nc short circuit collector current max. 1000 short circuits time between short circuits: 1.0s k c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 458 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 26 - ns rise time v r - 29 - ns turn-off delay time v d(off) - 299 - ns fall time v f - 29 - ns turn-on energy g on - 1.20 - mj turn-off energy g off - 1.40 - mj total switching energy g ts - 2.60 - mj v vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 , r g(off) =7.0 , l =103nh, c =39pf l , c fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
datasheet 5 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series diodecharacteristic,at t vj =25c diode reverse recovery time v rr - 143 - ns diode reverse recovery charge s rr - 1.80 - c diode peak reverse recovery current k rrm - 27.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -671 - a/s v vj =25c, v r =400v, i f =50.0a, di f /dt =1280a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time v d(on) - 27 - ns rise time v r - 33 - ns turn-off delay time v d(off) - 341 - ns fall time v f - 55 - ns turn-on energy g on - 1.80 - mj turn-off energy g off - 1.85 - mj total switching energy g ts - 3.65 - mj v vj =175c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =7.0 , r g(off) =7.0 , l =103nh, c =39pf l , c fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time v rr - 205 - ns diode reverse recovery charge s rr - 4.30 - c diode peak reverse recovery current k rrm - 40.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -449 - a/s v vj =175c, v r =400v, i f =50.0a, di f /dt =1280a/s g c e g c e
datasheet 6 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 1. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 3. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 15 30 45 60 75 90 105 120 135 150 v ge =20v 15v 13v 11v 9v 7v figure 4. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 15 30 45 60 75 90 105 120 135 150 v ge =20v 15v 13v 11v 9v 7v g c e g c e
datasheet 7 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 t vj = 25c t vj = 175c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 i c = 25a i c = 50a i c = 100a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t j =175c, v ce =400v, v ge =0/15v, r g =7 ,dynamictestcircuitin figure e) k c ,collectorcurrent[a] t ,switchingtimes[ns] 0 20 40 60 80 100 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t j =175c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) t g ,gateresistor[ ] t ,switchingtimes[ns] 0 5 10 15 20 25 30 10 100 1000 t d(off) t f t d(on) t r g c e g c e
datasheet 8 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g =7 ,dynamictestcircuitinfigure e) v j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0,8ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 typ. min. max. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t j =175c, v ce =400v, v ge =0/15v, r g =7 ,dynamictestcircuitin figure e) k c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t j =175c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) t g ,gateresistor[ ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 e off e on e ts g c e g c e
datasheet 9 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g =7 ,dynamictestcircuitin figure e) v j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t j =175c, v ge =0/15v, i c =50a, r g =7 ,dynamictestcircuitin figure e) ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 325 350 375 400 425 450 475 500 0 1 2 3 4 5 6 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 12 14 16 18 20 v cc =120v v cc =480v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res g c e g c e
datasheet 10 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 17. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 13 14 15 16 17 18 19 20 0 100 200 300 400 500 600 700 800 900 figure 18. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce =400v,startat t j =25c, t j max 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 14 figure 19. igbttransientthermalimpedanceasa functionofpulsewidthfordifferentduty cycles d ( d = t p /t) t p ,pulsewidth[s] thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 7.0e-3 4.5e-5 2 0.03736 1.0e-4 3 0.09205 7.2e-4 4 0.12996 8.3e-3 5 0.18355 0.07425 figure 20. diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cycles d ( d = t p /t) t p ,pulsewidth[s] thjc ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.1879 4.8e-5 2 0.1673 6.4e-4 3 0.2007 7.3e-3 4 0.2441 0.07037 g c e g c e
datasheet 11 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 21. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 900 1000 1100 1200 1300 1400 1500 0 50 100 150 200 250 300 350 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 22. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 900 1000 1100 1200 1300 1400 1500 0 1 2 3 4 5 6 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 23. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 900 1000 1100 1200 1300 1400 1500 0 5 10 15 20 25 30 35 40 45 50 t vj = 25c, i f = 50a t vj = 175c, i f = 50a figure 24. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v,dynamictestcircuitinfiguree) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 900 1000 1100 1200 1300 1400 1500 -900 -800 -700 -600 -500 -400 -300 -200 t vj = 25c, i f = 50a t vj = 175c, i f = 50a g c e g c e
datasheet 12 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series figure 25. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 15 30 45 60 75 90 105 120 135 150 t vj = 25c t vj = 175c figure 26. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f = 25a i f = 50a i f = 100a g c e g c e
datasheet 13 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series g c e g c e package drawing pg-to247-3
datasheet 14 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series g c e g c e package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 15 v2.1 2017-02-09 AIKW50N60CT trenchstop tm series revisionhistory AIKW50N60CT revision:2017-02-09,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2017-02-09 data sheet created g c e g c e package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarksofinfineontechnologiesag hvic?,ipm?,pfc?,au-convertir?,aurix?,c166?,canpak?,cipos?,cipurse?,cooldp?, coolgan?,coolir?,coolmos?,coolset?,coolsic?,dave?,di-pol?,directfet?,drblade?,easypim?, econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,ganpowir?, hexfet?,hitfet?,hybridpack?,imotion?,iram?,isoface?,isopack?,ledrivir?,litix?,mipaq?, modstack?,my-d?,novalithic?,optiga?,optimos?,origa?,powiraudio?,powirstage?,primepack?, primestack?,profet?,pro-sil?,rasic?,real3?,smartlewis?,solidflash?,spoc?, strongirfet?,supirbuck?,tempfet?,trenchstop?,tricore?,uhvic?,xhp?,xmc? trademarksupdatednovember2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2017. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e g c e package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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